Silicon detector with Low Interaction with Material 5

SLIM 5 DIT-PRJ-05-119

Status NOT active project
DISI role Partner
Project type Research Project
Dimension National
Acquisition date 2005-11-29
Start date 2006-01-01
End date 2006-12-31

Project details

Project astract Aim of this project is to advance the state-of-the-art of detectors for high energy physics experiments<br/>by developing completely, from the design to the construction of a working prototype, a tracking detector made of thin silicon, with level 1 triggering capabilities. The prototype will consist of six layers of detectors: two layers made of Monolithic Active Pixel Sensors (MAPS) fabricated in deep submicron CMOS technology and four layers of silicon strip detectors made on thin high resistivity substrates by using dedicated processes. Associative memory systems will be used for on-line reconstruction of particle tracks. Moreover, in order to reduce the amount of material in the active region so as to improve the momentum resolution, both the mechanical supports and the cooling systems will be optimized. It is foreseen to demonstrate the operation of the prototype detector under a test beam by the end of the project.
Fundings 127000 €
Partners
  • INFN Bologna
  • INFN Torino
  • INFN Trieste
  • INFN Pisa
  • INFN Pavia
  • INFN - Trento

DISI Sub-project details

Project astract The activity foreseen at Trento is the development of thin microstrip detectors on high resistivity substrates. Both passive detectors and active detectors embedding a JFET-based source follower<br/>at the edge of each strip will be considered. Moreover, radiation detectors with internal signal amplification provided by an integrated bipolar transistor will be studied.
Fundings 4500 €
Manager Giovanni Soncini
Participating RP