Development and optimization of silicon detectors with 3-D Electrodes and Active edgeS

TRIDEAS 2011 DIT-PRJ-10-061

Status NOT active project
DISI role Coordinator
Project type Research Project
Dimension National
Acquisition date 2010-09-20
Start date 2011-01-01
End date 2011-12-31

Project details

Project astract Owing to their intrinsic radiation hardness, silicon radiation detectors with three dimensional electrodes (3-D detectors) represent one of the favourite options for future particle physics experiments at high luminosity colliders (e.g., the upgrade of the LHC, sLHC). In addition, 3-D technology is suitable for manufacturing detectors with "active edge", i.e., terminated with heavily doped trenches, so that the insensitive edge region can be reduced to less than 10 micron, to be compared to few hundreds micron for standard planar detectors. This option enables to build large area seamlessly tiled detector matrices, i.e., omitting sensor overlap within the same layer. This greatly facilitates the layout, reduces the material budget and therefore improves the momentum resolution, as required by applications at the ILC and Super B-Factory. Building on the experience and promising results achieved by the proponents in the TREDI project (2005-2008), the TRIDEAS project aims at further developing and optimizing 3D silicon radiation detectors with active edges. Both fabrication and design issues will be addressed, investigating solutions aimed at performance enhancement and at production yield improvement. A thorough characterization work will be carried out, including electrical, radiation hardness and functional tests, and also taking benefit from the external support of some groups belonging to the ATLAS 3D Collaboration, which expressed a strong interest toward this activity, in view of both the sLHC and the ATLAS b-layer replacement in 2013. Detector fabrication will be carried out at Fondazione Bruno Kessler (formerly ITC-irst) of Trento, where the key processing equipment, i.e., the Deep Reactive Ion Etching (DRIE) machine has recently been purchased and successfully commissioned, with very encouraging results from initial tests. The project will run from 2009 to 2011. Over the next three years, we aim at achieving for these detectors both high quality performance and demonstration of the possibility of medium-volume production (few hundreds detectors per year) with reasonable yield, so as to cope with the challenging demands of future sensor applications in high energy physics. Other applications in biology, medicine and material science will also benefit from such an effort, which could let Italy play a more important role on the technological side. This project will bring together the expertise of three INFN Chapters, namely Bari, Trento and Trieste. In addition there will be the active participation of Fondazione Bruno Kessler (FBK-irst), and the external support of INFN Genova.
Fundings 35500 €
Partners
  • INFN Trento
  • INFN Trieste
  • INFN Bari

DISI Sub-project details

Project astract Besides coordinating the project, the group of Trento will be mainly involved in the detector design and TCAD simulation, wafer layout editing and process development in tight cooperation with FBK-irst. Moreover, it will perform electrical and electro-optical tests, and participate to beam tests at CERN.
Fundings 33500 €
Manager Gian Franco Dalla Betta
Participating RP